Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-03-24
2008-05-13
Purvis, Sue A. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S410000, C257S324000, C257SE29132
Reexamination Certificate
active
07372112
ABSTRACT:
A high dielectric gate insulating film having the structure that a high-nitrogen layer, a low-nitrogen layer, and a high-nitrogen layer are layered in this order from a silicon-substrate side.
REFERENCES:
patent: 2003/0176038 (2003-09-01), Kobayashi et al.
patent: 2005/0280104 (2005-12-01), Li
patent: 2007/0001241 (2007-01-01), Lim et al.
patent: 59-011663 (1984-01-01), None
patent: 2002-299607 (2002-10-01), None
patent: 2003-008011 (2003-01-01), None
The International Preliminary Report on Patentability for related International Application No. PCT/JP2004/0004060 mailed Mar. 2, 2006 with English translation.
International Search Report for Application No. PCT/JP2004/004060 mailed Jul. 13, 2004.
Sanghun Jeon, et al., “Electrical characteristics of ZrOxNy prepared by NH3, annealing of ZrO2” Applied Physics Letters, vol. 79, No. 2, Jul. 9, 2001, pp. 245-247.
Hyung-Seok Jung et al. “Improved Current Performance of CMOSFETs with Nitrogen Incorporated HfO2-Al2O3 Laminate Gate Dielectric”, Electron Devices Meeting, 2002, IEDM' 02.Digest. International, 2002, 12, pp. 853-856.
T. Nishimura et al. “Effects of Nitrogen Incorporation into HfA1Ox Films on Gate Leakage Current—From XPS Study of Hf Bonding States”, Extended Abstracts of International Workship On Gate Insulator 2003, 11, pp. 180-185.
Iwamoto Kunihiko
Nabatame Toshihide
Tominaga Koji
Yasuda Tetsuji
Cantor & Colburn LLP
Horiba Ltd.
Purvis Sue A.
Renesas Technology Corp.
Rodela Eduardo A.
LandOfFree
Semiconductor device, process for producing the same and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device, process for producing the same and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device, process for producing the same and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3984335