Active solid-state devices (e.g. – transistors – solid-state diode – Encapsulated – With specified encapsulant
Reexamination Certificate
2005-09-14
2008-08-26
Thai, Luan (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Encapsulated
With specified encapsulant
C257S787000, C257SE23116, C257SE23126, C257SE23129
Reexamination Certificate
active
07417330
ABSTRACT:
A semiconductor device includes a semiconductor substrate having an integrated circuit and at least one connection pad, and at least one external connection electrode electrically connected with the connection pad. A first sealing material is provided on the semiconductor substrate around the external connection electrode, each impurity concentration of an Na ion, a K ion, a Ca ion and Cl ion contained in the first sealing material being not greater than 10 ppm. A second sealing material is provided on at least one of a lower surface and a peripheral side surface of the semiconductor substrate, a total impurity concentration of an Na ion, a K ion, a Ca ion and a Cl ion contained in the second sealing material being not smaller than 100 ppm.
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Mihara Ichiro
Wakabayashi Takeshi
Casio Computer Co. Ltd.
Frishauf Holtz Goodman & Chick P.C.
Thai Luan
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