Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – Groove
Reexamination Certificate
2008-06-24
2009-10-27
Chambliss, Alonzo (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
Groove
C257S738000, C257S787000, C257SE23127
Reexamination Certificate
active
07608911
ABSTRACT:
A semiconductor device is disclosed, which comprises a semiconductor element in which a laminated film composed of a plurality of layers including an insulating film is formed on a surface of a semiconductor substrate, and a portion of the laminated film is removed from the surface of the semiconductor substrate so that the semiconductor substrate is exposed at the portion, a mounting substrate on which the semiconductor element is mounted, and a resin layer which seals at least a surface side of the semiconductor element with resin.
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Notification of Reasons for Rejection dated Sep. 19, 2006 in Japanese Patent Application No. 2005-086815.
Final Notice of Rejection mailed Jun. 5, 2007, for Japanese Application No. 2005-086815 and English translation thereof.
Hosokawa Ryuji
Imori Yoshihisa
Imoto Takashi
Kiritani Mika
Kurosawa Tetsuya
Chambliss Alonzo
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
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