Semiconductor device of transistor structure having strained...

Details Semiconductor device of transistor structure having strained... Semiconductor device of transistor structure having strained...

2005-08-16

2005-08-16

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Including semiconductor material other than silicon or...

Containing germanium, ge

Reexamination Certificate

active

06930374

ABSTRACT:
The semiconductor device comprises a p type Si substrate10; a SiGe buffer layer12formed on the p type Si substrate10and having element isolation grooves16formed in the surface, which define an active region18; a SiGe regrown buffer layer20formed on the SiGe buffer layer12; a strained Si channel layer22formed on the side walls of the element isolation grooves16and on the SiGe regrown buffer layer20in the active region; a SiN film24formed on the strained Si channel layer22on the side walls of the element isolation grooves16; and an element isolation insulation film26buried in the element isolation grooves.

REFERENCES:
patent: 2004/0009636 (2004-01-01), Ichinose et al.
patent: 2004/0121554 (2004-06-01), Ohnishi et al.

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