Semiconductor device of the type sealed in glass comprising a se

Details Semiconductor device of the type sealed in glass comprising a se Semiconductor device of the type sealed in glass comprising a se

1997-04-14

1998-06-02

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Encapsulated

With specified encapsulant

257771, 257 44, 257787, 257788, 257104, 257770, 257763, 257762, 257764, H01L 2900, H01L 2348

Patent

active

057604827

ABSTRACT:
The invention relates to a semiconductor device of the type sealed in glass, comprising a silicon semiconductor body having a pn-junction between opposing faces which are connected to slugs of a transition metal by means of a bonding layer, the bonding layer comprising a quantity of aluminum in the range between 7 and 15 wt. % and a quantity of silver in the range between 85 and 93 wt. %.

REFERENCES:
patent: 4117589 (1978-10-01), Francis et al.
patent: 4446502 (1984-05-01), Boser et al.
patent: 5369220 (1994-11-01), Harada et al.
"Constitution of Binary Alloys", by Dr. M. Hansen, 2nd Ed., McGraw-Hill Company, 1958, Ag-Al Alloys, pp. 1-3. No Month.

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