Semiconductor device of reduced gate overlap capacitance and...

Details Semiconductor device of reduced gate overlap capacitance and... Semiconductor device of reduced gate overlap capacitance and...

2006-05-16

2006-05-16

Smith, Brad (Department: 2829)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S412000, C257S288000

Reexamination Certificate

active

07045867

ABSTRACT:
Provided is an MOS transistor capable of reducing gate overlap capacitance without decreasing the driving current of the MOS transistor. Specifically, a double-angle smile oxidation structure is obtainable by curving the side surface of a gate electrode (22) so as to widen upwardly, and thickening the edge portion of a gate oxide film (21) by re-oxidation. The impurity concentration of a source/drain layer under the double-angle smile oxidation structure (a region around point B) is set to the range of 4×1018cm−3±40%.

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