Semiconductor device obtained by dividing semiconductor...

Details Semiconductor device obtained by dividing semiconductor... Semiconductor device obtained by dividing semiconductor...

2006-08-15

2006-08-15

Fourson, George (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Alignment marks

C257SE21238, C257SE21596, C257SE23179, C438S114000, C438S462000, C438S465000, C438S975000

Reexamination Certificate

active

07091624

ABSTRACT:
A semiconductor chip is formed by dividing a semiconductor wafer by use of the laser dicing technique. The semiconductor chip has a laser dicing region on the side surface thereof. A dummy wiring layer is formed along the laser dicing region on the surface layer of the laser dicing region. A laser beam is applied to the dummy wiring layer to divide the semiconductor wafer.

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Notification of Reasons for Rejection from the Japanese Patent Office dated Nov. 22, 2005, in patent application No. 2003-006387, and English translation thereof.

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