Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Die bond
Reexamination Certificate
2007-02-20
2007-02-20
Williams, Alexander Oscar (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Die bond
C257SE23021, C257SE23060, C257S785000, C257S690000
Reexamination Certificate
active
10644603
ABSTRACT:
A wiring terminal is formed on a wiring substrate, and an electrode is formed on a semiconductor device. The width of the wiring terminal is smaller than the width of the electrode. When the semiconductor device is mounted on the wiring substrate, the wiring terminal becomes embedded in the electrode due to applied pressure.
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Communication from Chinese Patent Office regarding counterpart application.
Communication from European Patent Office regarding counterpart application.
Ashida Takeshi
Nakazawa Masahiko
Yamada Kazuyuki
Yumoto Masanori
Harness & Dickey & Pierce P.L.C.
Seiko Epson Corporation
Williams Alexander Oscar
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