Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material
Reexamination Certificate
2007-05-22
2007-05-22
Ho, Tu-Tu (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Insulating material
C257S621000, C257S698000, C257S434000, C257SE23011
Reexamination Certificate
active
11038420
ABSTRACT:
An image pickup element and a micro-lens part are formed on the front surface of a semiconductor substrate; through electrodes passing through the semiconductor substrate are formed; protruding parts protruding from the front surface toward a glass lid are formed in a thickness greater than the thickness of the micro-lens part on the through electrodes; and the protruding parts are interposed between the semiconductor substrate and the glass lid.
REFERENCES:
patent: 2002/0019069 (2002-02-01), Wada
patent: 2004/0077121 (2004-04-01), Maeda et al.
patent: 2001-351997 (2001-12-01), None
patent: 2002-94082 (2002-03-01), None
patent: 2002-329852 (2002-11-01), None
Fujihara Norito
Ono Atsushi
Ho Tu-Tu
Nixon & Vanderhye P.C.
Sharp Kabushiki Kaisha
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