Semiconductor device minimizing hot carrier generation

Details Semiconductor device minimizing hot carrier generation Semiconductor device minimizing hot carrier generation

1996-06-17

1998-03-10

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257408, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

057264732

ABSTRACT:
A semiconductor device has an electric field intensity profile which can suppress generation of hot carriers near a drain region. Under the conditions maximizing a substrate current, a formula (1) of E2<E1/2 is satisfied by a peak value (E1) in an electric field intensity profile in a channel length direction at a depth from the main surface of the semiconductor substrate allowing passage of carriers and an electric field intensity (E2) in the electric field intensity profile at an end of the gate electrode near the drain region. Generation of hot carriers near the drain can be suppressed more effectively than the case not satisfying the above conditions.

REFERENCES:
patent: 5440165 (1995-08-01), Mitsunaga et al.
patent: 5565700 (1996-10-01), Chou et al.
"Deep-Submicrometer Large-Angle-Tilt Implanted Drain (LATID) Technology", Hori et al., IEEE Transaction on Electron Devices, vol. 39, No. 10, Oct. 1992.

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