Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2006-10-31
2006-10-31
Clark, Jasmine (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S780000, C257S781000, C257S784000, C257S693000, C257S738000
Reexamination Certificate
active
07129581
ABSTRACT:
A semiconductor device is provided comprising: a semiconductor element including a plurality of electrodes; a plurality of resin layers; a plurality of wirings; and a plurality of external terminals coupled to the wirings. First wirings of the plural wirings are formed at the bottom of a first resin layer and second wirings are formed at the top of the first resin layer.
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Examination result issued in corresponding Chinese Patent application.
Clark Jasmine
Harness & Dickey & Pierce P.L.C.
Seiko Epson Corporation
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