Semiconductor device, method of manufacturing the same,...

Details Semiconductor device, method of manufacturing the same,... Semiconductor device, method of manufacturing the same,...

2007-02-09

2009-10-20

Tran, Minh-Loan T (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Gate arrays

With particular signal path connections

C257S401000, C257SE27084

Reexamination Certificate

active

07605409

ABSTRACT:
A semiconductor device includes first and second unit circuits. Each first unit circuit has first transistors connected in series, wherein each of the first transistors includes a first gate structure having a pitch. Each second unit circuit has second transistors connected in series, wherein each of the second transistors includes a second gate structure having the pitch. A third transistor and a fourth transistor electrically isolate each of the first and second unit circuits, respectively. An insulation layer covers the first through the fourth transistors. Plugs in the insulation layer are connected to a first gate structure, a second gate structure, a first source region, a first drain region, a second source region or a second drain region. A wiring is connected to the plugs.

REFERENCES:
patent: 5029136 (1991-07-01), Tran et al.
patent: 5693970 (1997-12-01), Ikemasu
patent: 5849614 (1998-12-01), Chan
patent: 6747320 (2004-06-01), Nakabayashi
patent: 2002/0163022 (2002-11-01), Kosugi et al.
patent: 2001-0084292 (2001-09-01), None
patent: 2005-0060179 (2005-06-01), None
English language abstract of Korean Publication No. 2001-0084292.
English language abstract of Korean Publication No. 2005-0060179.

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