Semiconductor device method of manufacturing

Details Semiconductor device method of manufacturing Semiconductor device method of manufacturing

2005-12-13

2005-12-13

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S151000, C438S158000

Reexamination Certificate

active

06974732

ABSTRACT:
To effectively crystallize an amorphous semiconductor film comprising silicon by utilizing nickel element and remove nickel element contributed to the crystallization, a mask103is provided on an amorphous silicon film102, oxide film patterns107and108including nickel are formed, phosphorus is doped in a region109, thereafter, heating is performed, nickel element is diffused via paths110and111and nickel element diffuses in the amorphous silicon film and gettered by phosphorus at the region109by which crystallization of diffusion of nickel and gettering of nickel can be carried out simultaneously.

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