Semiconductor device, method of generating pattern for...

Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design

Reexamination Certificate

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C716S030000, C716S030000

Reexamination Certificate

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07062732

ABSTRACT:
To provide a semiconductor device characterized in that: a decoupling capacitor can be increased; noise generated from an electric power supply can be effectively absorbed; and a stable operation of a circuit can be realized.Irrespective of whether or not a region is close to a power supply wiring or a ground wiring, MOS is spread all over a spare area of a chip and connected to a power supply wiring and ground wiring by utilizing a wiring layer and diffusion layer.

REFERENCES:
patent: 5631492 (1997-05-01), Ramus et al.
patent: 5885856 (1999-03-01), Gilbert et al.
patent: 6157067 (2000-12-01), Hsu et al.
patent: 6434730 (2002-08-01), Ito et al.
patent: 6467070 (2002-10-01), Kuroda et al.
patent: 6551895 (2003-04-01), Hsu et al.
patent: 2000-208634 (2000-11-01), None
patent: 2001-356279 (2001-12-01), None

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