Semiconductor device, method of fabricating the same and copper

Details Semiconductor device, method of fabricating the same and copper Semiconductor device, method of fabricating the same and copper

1996-01-30

1998-05-05

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257737, 257738, 257736, 257748, 257766, 257768, 257772, H01L 2348, H01L 2352, H01L 2940

Patent

active

057478813

ABSTRACT:
A semiconductor device comprises a semiconductor chip, an Au bump formed on the semiconductor chip, and Cu lead bonded to the Au bump through a bonding part. The Cu lead has a Cu core and a plated Sn layer formed on the Cu core, and the bonding part is formed of an Au--rich Au--Cu--Sn alloy of a ternary system having a single-phase structure with a composition of 15 atomic % Sn or less and 25 atomic % Cu or less.

REFERENCES:
patent: 4634638 (1987-01-01), Aunslie et al.
patent: 5463245 (1995-10-01), Hiruta

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