Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2011-07-12
2011-07-12
Bryant, Kiesha R (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257SE23142
Reexamination Certificate
active
07977795
ABSTRACT:
A semiconductor device according to an embodiment of the present invention has: a semiconductor substrate; an interlayer insulating film formed above the semiconductor substrate; a protective film formed on the interlayer insulating film, the protective film having a higher density than that of the interlayer insulating film; at least one of a wiring and a dummy wiring formed in the interlayer insulating film and the protective film; and a separation wall formed within the interlayer insulating film so as to surround a low density region to separate the low density region from other regions, a sum of covering densities of the wiring and the dummy wiring being lower than a predetermined prescribed value in the low density region.
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Office Action mailed Jan. 14, 2011, in Japanese Patent Application No. 2006-354769. filed Dec. 28, 2006, (with English language translation).
Higashi Kazuyuki
Matsunaga Noriaki
Anya Igwe U
Bryant Kiesha R
Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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