Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Plural recrystallized semiconductor layers
Patent
1997-05-27
1998-04-28
Meier, Stephen
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Plural recrystallized semiconductor layers
257 72, 257 64, 257 65, H01L 2904, H01L 31036, H01L 2912
Patent
active
057448248
ABSTRACT:
A liquid crystal display device including: a display section including a liquid crystal layer; a pair of substrates interposing the liquid crystal layer; a plurality of pixel electrodes located in a matrix on one of the pair of substrates; a plurality of first thin film transistors respectively connected to the plurality of pixel electrodes; and a peripheral driving circuit located for driving the display section, the peripheral driving circuit being located on the substrate on which the first thin film transistors are located and having a second thin film transistor. Each of the first thin film transistors includes a first channel layer formed of a first crystalline silicon layer, and the second thin film transistor includes a second channel layer formed of a second crystalline silicon layer having a higher mobility than the mobility of the first crystalline silicon layer. The second crystalline silicon layer includes a catalytic element for promoting crystallization.
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Kousai Takamasa
Makita Naoki
Takayama Toru
Meier Stephen
Sharp Kabushiki Kaisha
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