Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With electrical contact in hole in semiconductor
Reexamination Certificate
2007-03-20
2007-03-20
Ho, Tu-Tu (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With electrical contact in hole in semiconductor
C257S774000, C257S777000, C257SE23011, C438S667000
Reexamination Certificate
active
10844419
ABSTRACT:
The invention provides highly reliable semiconductor devices, methods for manufacturing the same, circuit substrates and electronic devices. A semiconductor substrate is provided that includes: an integrated circuit and a pad defining a through hole electrically connected to the integrated circuit. A convex section is formed at a first surface where the pad is formed in a region that overlaps the through hole in the semiconductor substrate. A dielectric layer is formed on an inner surface of the convex section. An electrical connection section is provided having a conductive section disposed inside the dielectric layer and a wiring section disposed on the first surface to be electrically connected to the conductive section. An end surface of the conductive section is exposed through a second surface of the semiconductor substrate on the opposite side of the first surface.
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Ho Tu-Tu
Oliff & Berridg,e PLC
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