Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-07-12
2011-07-12
Whitmore, Stacy A (Department: 2825)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S624000, C438S631000, C438S926000, C716S119000, C716S126000, C257S459000, C257S396000
Reexamination Certificate
active
07977233
ABSTRACT:
A semiconductor device has first wiring layers30and a plurality of dummy wiring layers32that are provided on the same level as the first wiring layers30. The semiconductor device defines a row direction, and first virtual linear lines L1extending in a direction traversing the row direction. The row direction and the first virtual linear lines L1define an angle of 2-40 degrees, and the dummy wiring layers32are disposed in a manner to be located on the first virtual linear lines L1. The semiconductor device also defines a column direction perpendicular to the row direction, and second virtual linear lines L2extending in a direction traversing the column direction. The column direction and the second virtual linear lines L2define an angle of 2-40 degrees, and the dummy wiring layers32are disposed in a manner to be located on the second virtual linear lines L2.
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Kasuya Yoshikazu
Kawahara Kei
Mori Katsumi
Harness & Dickey & Pierce P.L.C.
Seiko Epson Corporation
Whitmore Stacy A
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