Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2011-05-17
2011-05-17
Nguyen, Dao H (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
Reexamination Certificate
active
07943935
ABSTRACT:
A semiconductor device includes a thin-film transistor including a polycrystalline silicon layer, disposed above a substrates serving as an active layer. The thin-film transistor includes a first thin-film transistor section including a first channel region disposed in a drain-side portion of the polycrystalline silicon layer and also includes a second thin-film transistor section including a second channel region that is adjacent to the first channel region with an impurity-implanted region disposed therebetween. The first and second thin-film transistor sections are of the same conductivity type. The gate electrode of the first thin-film transistor section is electrically connected to the gate electrode of the second thin-film transistor section. The first thin-film transistor section has a channel length of less than 2 μm.
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Nguyen Dao H
Nguyen Tram H
Oliff & Berridg,e PLC
Seiko Epson Corporation
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