Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Reexamination Certificate
2007-11-27
2007-11-27
Lam, Cathy F. (Department: 1775)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
C257S702000, C174S251000, C174S260000, C174S262000, C428S209000, C428S901000
Reexamination Certificate
active
10725993
ABSTRACT:
The present invention provides a low-profile and light-weight semiconductor device having improved product reliability and higher frequency performance. A multi-layer interconnect line structure is disposed just under circuit devices410aand410b.An Interlayer insulating film405that composes a part of the multi-layer interconnect line structure is formed of a material having a relative dielectric constant within a range from 1.0 to 3.7, and a dielectric loss tangent within a range from 0.0001 to 0.02.
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Chinese Office Action for Corresponding Patent Application No. 200310120768.4, Date of Dispatch: Mar. 31, 2006.
Japanese Office Action issued in corresponding Japanese Patent Application No. 2003-400047, dated Aug. 8, 2006.
Igarashi Yusuke
Kojima Noriaki
Mizuhara Hideki
Sakamoto Noriaki
Usui Ryosuke
Kanto Sanyo Semiconductors Co., Ltd.
Lam Cathy F.
McDermott Will & Emery LLP
Sanyo Electric Co,. Ltd.
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