Semiconductor device, method for fabricating the same, and...

Details Semiconductor device, method for fabricating the same, and... Semiconductor device, method for fabricating the same, and...

2005-02-08

2005-02-08

Auduong, Gene N. (Department: 2818)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S189011, C365S189090

Reexamination Certificate

active

06853576

ABSTRACT:
A semiconductor memory device has a plurality of memory cells each having a first ferroelectric capacitor for storing data as a polarization value. First voltage applying means applies a first read voltage between the pair of electrodes of the first ferroelectric capacitor composing that one of the plurality of memory cells from which data is to be read. Data reading means detects the polarization value in the first ferroelectric capacitor when the first read voltage is applied between the pair of electrodes of the first ferroelectric capacitor and thereby reads the data stored in the first ferroelectric capacitor therefrom. A hysteresis loop in the first ferroelectric capacitor is shifted in a direction of voltage opposite in polarity to the first read voltage.

REFERENCES:
patent: 6424571 (2002-07-01), Pekny
patent: 6438021 (2002-08-01), Kato
patent: 6804139 (2004-10-01), Nordal
patent: P2001-308291 (2001-11-01), None

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