Semiconductor device manufacturing methods

Details Semiconductor device manufacturing methods Semiconductor device manufacturing methods

2005-11-09

2008-10-28

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S301000, C438S510000, C257SE21170, C257SE21006, C257SE21231, C257SE21248, C257SE21278, C257SE21622

Reexamination Certificate

active

07442640

ABSTRACT:
Methods of manufacturing a semiconductor device including a high-voltage device region and a low-voltage device region are provided. An illustrated method includes forming, on a substrate, a gate pattern for a high-voltage device and a low-voltage device; implanting ions into opposite sides of the gate pattern, to form a lightly doped drain structure while implanting ions into a portion of the high-voltage device region under the same conditions as the low-voltage device region to form an electrostatic discharge protecting device region; forming a spacer at the side surface of the gate pattern; forming a source region and a drain source at field regions disposed at the opposite sides of the gate pattern, respectively; and forming a metal layer on the front surface of the substrate including the gate pattern.

REFERENCES:
patent: 5618740 (1997-04-01), Huang
patent: 5672527 (1997-09-01), Lee
patent: 5780350 (1998-07-01), Kapoor
patent: 5897348 (1999-04-01), Wu
patent: 5998274 (1999-12-01), Akram et al.
patent: 6359314 (2002-03-01), Randazzo
patent: 6544849 (2003-04-01), Hsu et al.

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