Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-01-02
2007-01-02
Pham, Hoai (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S391000
Reexamination Certificate
active
11345238
ABSTRACT:
A semiconductor device includes a semiconductor substrate. A gate electrode is formed on the semiconductor substrate via a gate insulating film. A source region and a drain region of a first conductivity type are formed on the first side and the second side of the gate electrode, respectively, in the semiconductor substrate. A punch-through stopper region of a second conductivity type is formed in the semiconductor substrate such that the second conductivity type punch-through stopper region is located between the source region and the drain region at distances from the source region and the drain region and extends in the direction perpendicular to the principal surface of the semiconductor substrate. The concentration of an impurity element of the second conductivity type in the punch-through stopper region is set to be at least five times the substrate impurity concentration between the source region and the drain region.
REFERENCES:
patent: 5712501 (1998-01-01), Davies et al.
patent: 6084269 (2000-07-01), Davies et al.
patent: 6479356 (2002-11-01), Matsuoka
patent: 6538284 (2003-03-01), Riccobene et al.
patent: 6-37309 (1994-02-01), None
patent: 07-235673 (1995-09-01), None
patent: 09-116154 (1997-05-01), None
patent: 2002-535834 (2002-10-01), None
patent: WO 00/42647 (2000-07-01), None
Notification of Reason(s) for Refusal dated Feb. 28, 2006 issued with respect to corresponding Japanese Patent Application No. 2002-238554.
Kawai Shinichi
Kawamata Takayuki
Nomura Toshio
Satoh Shigeo
Watanabe Taketo
Fujitsu Limited
Pham Hoai
Westerman, Hattori, Daniels & Adrian , LLP.
LandOfFree
Semiconductor device, manufacturing method thereof, and CMOS... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device, manufacturing method thereof, and CMOS..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device, manufacturing method thereof, and CMOS... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3819605