Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of...
Reexamination Certificate
2003-04-04
2008-03-04
Schillinger, Laura M. (Department: 2813)
Semiconductor device manufacturing: process
Radiation or energy treatment modifying properties of...
C439S799000, C439S066000
Reexamination Certificate
active
07338913
ABSTRACT:
A laser annealing method for obtaining a crystalline semiconductor film having a large grain size is provided. Laser light is irradiated to the top surface and the bottom surface of an amorphous semiconductor film when crystallizing the amorphous semiconductor film by laser light irradiation. Furthermore, a relationship of 0<(I0′/I0)<1, or 1<(I0′/I0) is achieved for the ratio (I0/I0′) between the effective energy strength of the laser light when irradiated to the top surface (I0) and the effective energy strength of the laser light when irradiated to the bottom surface (I0′).
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Kasahara Kenji
Kawasaki Ritsuko
Ohtani Hisashi
Yamazaki Shunpei
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Schillinger Laura M.
Semiconductor Energy Laboratory Co,. Ltd.
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