Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-05-08
2007-05-08
Schillinger, Laura M. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S059000, C257S066000
Reexamination Certificate
active
11134401
ABSTRACT:
A multi-gate structure is used and a width (d1) of a high concentration impurity region sandwiched by two channel forming regions in a channel length direction is set to be shorter than a width (d2) of low concentration impurity regions in the channel length direction. Thus, a resistance of the entire semiconductor layer of a TFT which is in an on state is reduced to increase an on current. In addition, a carrier life time due to photoexcitation produced in the high concentration impurity region can be shortened to reduce light sensitivity.
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Hara et al., “Ultra-high Performance Poly-Si TFTs on a Glass by a Stable Scanning CW Laser Lateral Crystallization”, Digest of Technical Papers, AM-LCD, Jul. 11-13, 2001, pp. 227-230.
Maekawa Shinji
Shibata Hiroshi
Costellia Jeffrey L.
Nixon & Peabody LLP
Schillinger Laura M.
Semiconductor Energy Laboratory Co,. Ltd.
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