Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-08-30
2011-08-30
Mulpuri, Savitri (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S643000, C257SE21584
Reexamination Certificate
active
08008184
ABSTRACT:
A seed layer is formed on a surface of an insulating film and along a recess of the insulating film, and after a copper wiring is buried in the recess, a barrier film is formed, and an excessive metal is removed from the wiring. On a surface of a copper lower layer conductive path exposed at the bottom of the recess, a natural oxide of the copper is reduced or removed. On a substrate from which the natural oxide is reduced or removed, the seed layer, composed of a self-forming barrier metal having oxidative tendency higher than that of copper or an alloy of such metal and copper, is formed. The substrate is heated after burying copper in the recess. Thus, a barrier layer is formed by oxidizing the self-forming barrier metal. An excessive portion of the self-forming barrier metal is deposited on a surface of the buried copper.
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Korean Office Action issued Apr. 18, 2011 in counterpart Korean Application No. Oct. 2009-7025115 (6 pages).
Hosaka Shigetoshi
Koike Junichi
Matsumoto Kenji
Neishi Koji
Mulpuri Savitri
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Tohoku University
Tokyo Electron Limited
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