Semiconductor device manufacturing method including dry oxidatio

Details Semiconductor device manufacturing method including dry oxidatio Semiconductor device manufacturing method including dry oxidatio

1996-08-22

1997-06-10

Dang, Trung

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

438774, H01L 2176

Patent

active

056375280

ABSTRACT:
A method of manufacturing a semiconductor device including the steps of: (a) forming a mask layer of a desired pattern on a silicon substrate surface or on an SiO.sub.2 strain absorbing layer formed on the silicon substrate surface; (b) selectively oxidizing the silicon substrate in a dry oxygen atmosphere by using the mask layer as an oxidation mask; and (c) selectively oxidizing the silicon substrate in an atmosphere of dry oxygen mixed with gas containing halogen element, wherein a field oxide film having a thickness of 100 nm or more is formed. The first and second oxidizing steps (b) and (c) are preferably performed at temperatures between 950.degree. C. and 1200.degree. C. A field oxide film with a short bird's beak can be formed while maintaining a relatively high oxidation speed and preventing generation of a white ribbon.

REFERENCES:
patent: 5151381 (1992-09-01), Liu et al.

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