Semiconductor device manufacturing method having high aspect...

Details Semiconductor device manufacturing method having high aspect... Semiconductor device manufacturing method having high aspect...

2008-03-12

2011-11-22

Vinh, Lan (Department: 1713)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S689000, C438S700000, C257SE21545, C257SE21546, C257S759000, C257S761000, C257S762000

Reexamination Certificate

active

08062979

ABSTRACT:
The object of the present invention is to embed an insulating film in a hole having a high aspect ratio and a small width without the occurrence of a void. The thickness of a polishing stopper layer is reduced by making separate layers respectively serve as a mask during forming the hole in a semiconductor substrate, and a stopper during removing the insulating film filled in the hole.

REFERENCES:
patent: 7078351 (2006-07-01), Chiu et al.
patent: 7223525 (2007-05-01), Lipinski
patent: 7256500 (2007-08-01), Shimizu et al.
patent: 7626234 (2009-12-01), Inoue et al.
patent: 6-204332 (1994-07-01), None

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