Semiconductor device manufacturing method comprising a metal...

Semiconductor device manufacturing: process – Semiconductor substrate dicing – Having specified scribe region structure

Reexamination Certificate

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Details

C438S460000, C438S463000, C257S620000, C257SE21599

Reexamination Certificate

active

07892949

ABSTRACT:
To divide a semiconductor wafer by stealth dicing, a test pad in a cutting region and an alignment target are collectively arranged along one side in a width direction of the cutting region, and a laser beam for forming a modified region is irradiated to a position away in plane from the test pad and the alignment target Am. In this manner, defects in cutting shape in a cutting process of a semiconductor wafer using stealth dicing can be reduced or prevented.

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