Semiconductor device manufacturing method and substrate...

Details Semiconductor device manufacturing method and substrate... Semiconductor device manufacturing method and substrate...

2008-08-07

2010-12-28

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S787000, C438S791000, C257SE21278

Reexamination Certificate

active

07858534

ABSTRACT:
A semiconductor device manufacturing method comprises a process of forming a film on each of multiple substrates arrayed in a processing chamber by a thermal CVD method by supplying a film forming gas into the processing chamber while heating the interior of the processing chamber, wherein in the film forming process, a cycle is performed one time or multiple times with one cycle including a step of flowing the film forming gas from one end towards the other end along the substrate array direction, and a step of flowing the film forming gas from the other end towards the one end along the substrate array direction, without forming temperature gradient along the substrate array direction in the processing chamber.

REFERENCES:
patent: 7122085 (2006-10-01), Shero et al.
patent: 2002/0170674 (2002-11-01), Shapiro
patent: 2004/0250773 (2004-12-01), Hasegawa et al.
patent: 2005/0072357 (2005-04-01), Shero et al.
patent: 2007/0079525 (2007-04-01), Sogard
patent: 2009/0218045 (2009-09-01), Hiroshima et al.

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