Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Plural fluid growth steps with intervening diverse operation
Reexamination Certificate
2011-06-28
2011-06-28
Garber, Charles (Department: 2812)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Plural fluid growth steps with intervening diverse operation
Reexamination Certificate
active
07968437
ABSTRACT:
Productivity and product yield, as well as the step coverage and the adhesion are improved. A film forming process includes an initial film forming step, and a main film forming step. In the initial film forming step, a step of supplying a material gas into a processing chamber to adsorb the material gas on the substrate, and a step of supplying a first reaction gas not containing oxygen atoms into the processing chamber to cause a reaction with the material gas adsorbed on the substrate in order to from a thin film on the substrate, are repeated multiple cycles to form the thin film with the specified thickness on the substrate. In the main film forming step, a step of supplying a material gas into the processing chamber to adsorb the material gas on the substrate, and a step of supplying a second reaction gas containing oxygen atoms into the processing chamber to cause a reaction with the material gas adsorbed on the substrate in order to form a thin film on the substrate, are repeated multiple cycles, to form the thin film with a specified thickness on the thin film that was formed on the substrate in the initial film forming step.
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Horii Sadayoshi
Itatani Hideharu
Garber Charles
Hitachi Kokusai Electric Inc.
Kratz Quintos & Hanson, LLP
Stevenson Andre′ C
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