Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-08-13
2011-12-06
Deo, Duy (Department: 1713)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S622000, C438S623000, C438S624000, C438S625000
Reexamination Certificate
active
08071473
ABSTRACT:
An object of the present invention is to obtain a favorable etching shape in etching an organic film formed on a substrate.A semiconductor device manufacturing method according to the present invention comprises the steps of: etching with plasma a silicon-containing film and transferring a pattern of a pattern mask stacked on the silicon-containing film onto the silicon-containing film to form a patterned silicon-containing film; removing the pattern mask using plasma to expose the surface of the silicon-containing film; and etching the surface of the organic film through the patterned silicon-containing film by use of oxygen active species in plasma to form a concave portion on the organic film. Thereafter, the silicon-containing film is sputtered to form silicon-containing protection films on the inner wall surfaces of the concave portion. The concave portion is further etched in its depth direction through the patterned silicon-containing film by use of oxygen active species in plasma. Thus, the concave portion can be further etched while the side walls of the concave portion are protected from active oxygen species.
REFERENCES:
patent: 7671442 (2010-03-01), Anderson et al.
patent: 7923319 (2011-04-01), Futase et al.
patent: 2005/0121787 (2005-06-01), Uchida
patent: 2005/0186801 (2005-08-01), Uno et al.
patent: 2002-9058 (2002-01-01), None
Nagakura Koichi
Narishige Kazuki
Deo Duy
Smith , Gambrell & Russell, LLP
Tokyo Electron Limited
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