Semiconductor device manufacturing method and silicon oxide...

Details Semiconductor device manufacturing method and silicon oxide... Semiconductor device manufacturing method and silicon oxide...

2010-01-21

2011-12-20

Garber, Charles (Department: 2812)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Implanting to form insulator

C438S424000, C257SE21546, C257SE21547

Reexamination Certificate

active

08080463

ABSTRACT:
A semiconductor device manufacturing method has forming element isolation trenches in a semiconductor substrate, forming a silicon compound film in insides of the element isolation trenches in order to embed the element isolation trenches, conducting a first oxidation processing at a first temperature to reform a surface of the silicon compound film to a volatile matter emission preventing layer which permits passage of an oxidizing agent and impurities and which does not permit passage of a volatile matter containing silicon atoms, and conducting a second oxidation processing at a second temperature which is higher than the first temperature to form a coated silicon oxide film inside the element isolation trenches.

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