Semiconductor device manufacturing method and semiconductor...

Details Semiconductor device manufacturing method and semiconductor... Semiconductor device manufacturing method and semiconductor...

2011-06-14

2011-06-14

Blum, David S (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S649000, C257SE29155

Reexamination Certificate

active

07960764

ABSTRACT:
Disclosed is a semiconductor device manufacturing method in which a silicon nitride film is formed to cover an n-channel transistor formed on a semiconductor substrate and to apply a tensile stress in a channel length direction to a channel of the n-channel transistor, the method includes: forming a first-layer silicon nitride film above the n-channel transistor; irradiating the first-layer silicon nitride film with ultraviolet radiation; and after the ultraviolet irradiation, forming at least one silicon nitride film thinner than the first-layer silicon nitride film above the first-layer silicon nitride film. Silicon nitride films formed to apply the tensile stress is formed by respective steps.

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patent: 2010/0012992 (2010-01-01), Pidin
patent: 2006-237070 (2006-09-01), None

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