Semiconductor device manufacturing method and semiconductor...

Details Semiconductor device manufacturing method and semiconductor... Semiconductor device manufacturing method and semiconductor...

2005-09-20

2011-10-04

Bryant, Kiesha (Department: 2891)

Semiconductor device manufacturing: process

Gettering of substrate

C438S149000, C438S150000, C118S072000, C118S073000, C134S001000, C134S001300, C134S002000, C257SE21212

Reexamination Certificate

active

08030182

ABSTRACT:
By hydrogen-terminating a semiconductor surface using a solution containing HF2−ions and an oxidant, the hydrogen termination can be quickly carried out. In this case, the semiconductor surface is silicon having a (111) surface, a (110) surface, or a (551) surface.

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