Semiconductor device manufacturing method and projection exposur

Details Semiconductor device manufacturing method and projection exposur Semiconductor device manufacturing method and projection exposur

1993-01-29

1996-12-24

Dzierzynski, Paul M.

Optical: systems and elements

Diffraction

359577, 359564, 430 5, 355 53, 355 67, G02B 518, G02B 2700

Patent

active

055878342

ABSTRACT:
A semiconductor device manufacturing method is disclosed, which includes the steps of illuminating obliquely an original having a grating-like pattern, with a light beam having a main wavelength .lambda., and projecting a portion of diffraction light produced by the pattern onto a pupil plane of a projection optical system having a numerical aperture NA, so as to project the pattern onto a predetermined plane related to a photosensitive substrate, wherein the original has a partially isolated pattern and an auxiliary pattern, the partially isolated pattern is such a pattern having no adjoining pattern within a range of D.ltoreq.(.lambda./NA) where D is the distance from one side thereof as measured on the predetermined plane, the auxiliary pattern has a linewidth L which satisfies the relation L.ltoreq.0.2(.lambda./NA) and it extends parallel to at least a portion of the partially isolated pattern, the auxiliary pattern is provided at a distance S from one side of the partially isolated pattern in the direction substantially perpendicular to the one side, and the distance S is within a rage of 0.ltoreq.S.ltoreq.0.1(.lambda./NA).

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