Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2010-01-21
2011-10-25
Malsawma, Lex (Department: 2892)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S586000, C257SE21190, C257SE21206, C716S055000
Reexamination Certificate
active
08043948
ABSTRACT:
A semiconductor device manufacturing method includes: forming a conductive film over a substrate; forming an assist pattern on the conductive film; forming a metal film to cover the conductive film and the assist pattern; etching back the metal film to form at least one side wall film on a side surface of the assist pattern; removing the assist pattern; forming at least one resist pattern to selectively expose a portion of the conductive film and a portion of the side wall film; performing etching using the resist pattern as a mask to remove the exposed portion of the side wall film; and etching the conductive film using the side wall film as a mask to form a gate electrode and a contact region electrically connected to the gate electrode.
REFERENCES:
patent: 4037307 (1977-07-01), Smith
patent: 6362057 (2002-03-01), Taylor et al.
patent: 7508065 (2009-03-01), Sherrer et al.
patent: 7669172 (2010-02-01), Ito et al.
patent: 7770145 (2010-08-01), Nakano et al.
patent: 7772070 (2010-08-01), Kitajima et al.
patent: 7794614 (2010-09-01), Weis et al.
patent: 2006/0199325 (2006-09-01), Maeno et al.
patent: 2007/0238053 (2007-10-01), Hashimoto
patent: 2007-150166 (2007-06-01), None
Fujitsu Semiconductor Limited
Malsawma Lex
Westerman Hattori Daniels & Adrian LLP
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