Metal fusion bonding – Process – Plural joints
Reexamination Certificate
2007-08-30
2009-11-03
Stoner, Kiley (Department: 1793)
Metal fusion bonding
Process
Plural joints
C228S220000, C228S248100, C438S613000, C438S614000, C438S615000
Reexamination Certificate
active
07611041
ABSTRACT:
A highly reliable semiconductor chip electrode structure allowing control of interface reaction of bonding sections even in the case of using two- or three-element solder used conventionally is disclosed. A solder alloy making layer for preventing dissolving and diffusion of tin into tin-based lead free solder is thinly formed on a UBM layer. The tin-based solder is supplied in solder paste or solder ball form. A combined solder alloy layer composed of a combination of intermetallic compounds, one of tin and the solder alloy making layer, and one of tin and the UBM layer, is formed by heating and melting.
REFERENCES:
patent: 3839727 (1974-10-01), Herdzik et al.
patent: 5470787 (1995-11-01), Greer
patent: 5471092 (1995-11-01), Chan et al.
patent: 5902686 (1999-05-01), Mis
patent: 6013572 (2000-01-01), Hur et al.
patent: 6184061 (2001-02-01), Wu et al.
patent: 6201305 (2001-03-01), Darveaux et al.
patent: 6224690 (2001-05-01), Andricacos et al.
patent: 6281106 (2001-08-01), Higdon et al.
patent: 6417089 (2002-07-01), Kim et al.
patent: 6429046 (2002-08-01), Marlin
patent: 6476494 (2002-11-01), Hur et al.
patent: 6492197 (2002-12-01), Rinne
patent: 6569752 (2003-05-01), Homma et al.
patent: 6570251 (2003-05-01), Akram et al.
patent: 6689680 (2004-02-01), Greer
patent: 1 035 583 (2000-09-01), None
patent: 9-36120 (1997-02-01), None
patent: 9-181125 (1997-07-01), None
patent: 2000-150574 (2000-05-01), None
patent: 1995-8844 (1995-08-01), None
patent: WO 98/09332 (1998-03-01), None
Mikagi Kaoru
Nishiyama Tomohiro
Tago Masamoto
Tao Tetuya
NEC Corporation
Stoner Kiley
Sughrue & Mion, PLLC
LandOfFree
Semiconductor device, manufacturing method and apparatus for... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device, manufacturing method and apparatus for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device, manufacturing method and apparatus for... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4061456