Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-10-28
2000-11-28
Elms, Richard
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438677, 437228, 257751, H01L 2144
Patent
active
061535222
ABSTRACT:
A semiconductor device manufacturing method of the present invention comprises the steps of forming a groove on an insulating film formed over a semiconductor substrate, forming a first copper film on the insulating film and in the groove by sputtering using a target, reflowing the first copper film by heating it, growing a second copper film on the first copper film by plating or chemical vapor deposition, and removing the second copper film and the first copper film on the insulating film by chemical mechanical polishing to remain at least the first copper film in the groove. Accordingly, in the semiconductor device manufacturing method to provide copper wirings, increase in resistance can be suppressed by firmly embedding copper into the groove and also electromigration resistance of copper wirings can be improved.
REFERENCES:
patent: 5569627 (1996-10-01), Shinohara et al.
patent: 5973400 (1999-10-01), Murakami et al.
Hirao Shyoji
Takagi Hideo
Uji Shigetaka
Elms Richard
Fujitsu Limited
Luu Pho
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