Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2007-10-23
2007-10-23
Prenty, Mark V. (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S299000
Reexamination Certificate
active
11256597
ABSTRACT:
A semiconductor device manufacturing method is provided in which, in the dummy gate pattern formation process, the pattern formation process is simplified and costs are reduced. A semiconductor device manufacturing method including: forming a mask element on a substrate; patterning the mask element into a prescribed shape, and forming a depression in the mask element; placing a functional liquid in the depression; drying the functional liquid placed in the depression so as to form a functional film; annealing the functional film; and, removing the mask element so as to form a dummy gate pattern of a residue of the functional liquid.
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Harness & Dickey & Pierce P.L.C.
Prenty Mark V.
Seiko Epson Corporation
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