Semiconductor device manufacturing method

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation

Reexamination Certificate

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C438S299000

Reexamination Certificate

active

11256597

ABSTRACT:
A semiconductor device manufacturing method is provided in which, in the dummy gate pattern formation process, the pattern formation process is simplified and costs are reduced. A semiconductor device manufacturing method including: forming a mask element on a substrate; patterning the mask element into a prescribed shape, and forming a depression in the mask element; placing a functional liquid in the depression; drying the functional liquid placed in the depression so as to form a functional film; annealing the functional film; and, removing the mask element so as to form a dummy gate pattern of a residue of the functional liquid.

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Communication from European Patent Office re: related application, Jun. 2006.

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