Semiconductor device manufacturing method

Details Semiconductor device manufacturing method Semiconductor device manufacturing method

1996-12-17

1998-12-29

Fourson, George R.

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

438431, 438561, 438920, H01L 2176

Patent

active

058541209

ABSTRACT:
A polysilicon film is deposited in a trench formed in a silicon element substrate. The polysilicon film in the trench and on the silicon element substrate is anisotropically etched, so that the film remains on the side wall of the trench. The polysilicon film on the side wall is oxidized to obtain an insulating film, which buries the trench. At the same time, an oxidized film is formed on the surface of the silicon element substrate to complete a trench-mold separation area.

REFERENCES:
patent: 4356211 (1982-10-01), Riseman
patent: 4471525 (1984-09-01), Sasaki
patent: 4666656 (1987-05-01), Fulton et al.
patent: 4855017 (1989-08-01), Douglas
patent: 5416041 (1995-05-01), Schwalke
patent: 5445988 (1995-08-01), Schwalke
patent: 5496765 (1996-03-01), Schwalke

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