Semiconductor device manufacturing method

Details Semiconductor device manufacturing method Semiconductor device manufacturing method

2006-09-26

2006-09-26

Flynn, Nathan J. (Department: 2826)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S510000, C257S330000

Reexamination Certificate

active

07112519

ABSTRACT:
A semiconductor device includes: an n+type drain region; an n type drift region that connects with the n+type drain region; a p type body region; a n+type source region that connects with the p type body region; and a gate electrode that is provided, with being covered by a gate insulation film, in a gate trench that penetrates the p type body region. The semiconductor further includes: a p type silicon region that adjoins the n type drift region; and an n type silicon region provided in a region almost including a carrier passage that connects the n type drift region and the p type body region. Here, the p type silicon region and the p type body region directly connect with each other.

REFERENCES:
patent: 5773849 (1998-06-01), Harris et al.
patent: 5963807 (1999-10-01), Ueno
patent: 6174773 (2001-01-01), Fujishima
patent: 6479876 (2002-11-01), Deboy et al.
patent: 6621132 (2003-09-01), Onishi et al.
patent: 6700175 (2004-03-01), Kodama et al.
patent: 2002/0074596 (2002-06-01), Suzuki et al.
patent: 2000-260984 (2000-09-01), None
patent: 2001-111050 (2001-04-01), None
patent: 2001-244461 (2001-09-01), None
patent: 2001-332726 (2001-11-01), None
patent: 2002-184985 (2002-06-01), None
patent: 2002-203963 (2002-07-01), None

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