Semiconductor device manufacturing method

Details Semiconductor device manufacturing method Semiconductor device manufacturing method

2011-07-19

2011-07-19

Everhart, Caridad M (Department: 2895)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S167000, C438S705000, C257SE21407, C257SE21219

Reexamination Certificate

active

07981787

ABSTRACT:
A semiconductor device manufacturing method includes: providing a laminated member in which at least a first GaAs layer, an InAlGaAs layer and a second GaAs layer are laminated on or above a substrate in this order; and etching the second GaAs layer using the InAlGaAs layer as an etching stopper layer. A ratio of In:Al of the InAlGaAs layer is in a range of approximately 4:6 to approximately 6:4 and a ratio of (In+Al):Ga of the InAlGaAs layer is in a range of approximately 1.5:8.5 to approximately 5:5.

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