Semiconductor device manufacturing method

Details Semiconductor device manufacturing method Semiconductor device manufacturing method

2011-05-17

2011-05-17

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Having substrate registration feature

C438S975000, C257SE23179

Reexamination Certificate

active

07943478

ABSTRACT:
In a semiconductor device manufacturing method, a surface of a substrate structure including a semiconductor layer is covered with a first film including first and second openings. The first opening is configured as an alignment mark. The second opening is configured as an opening for introducing an impurity into a first predetermined position of the semiconductor layer. In this method, a third opening is formed in the first film, using a photo mask aligned with the first opening used as an alignment mark. The third opening is configured as an opening for introducing an impurity into a second predetermined position of the semiconductor layer.

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Office Action issued Nov. 24, 2010 in Japanese Patent Application No. 2005-288567 filed Sep. 30, 2005 (w/English language translation).

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