Semiconductor device manufacturing method

Details Semiconductor device manufacturing method Semiconductor device manufacturing method

2011-07-19

2011-07-19

Sarkar, Asok K (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21190, C257SE21165, C438S197000, C438S586000, C438S682000, C438S686000

Reexamination Certificate

active

07981795

ABSTRACT:
A semiconductor device manufacturing method has forming a metal film containing platinum by depositing a metal on a source/drain diffusion layer primarily made of silicon formed on a semiconductor substrate and on a device isolation insulating film; forming a silicide film by silicidation of an upper part of the source/drain diffusion layer by causing a reaction between silicon in the source/drain diffusion layer and the metal on the source/drain diffusion layer by a first heating processing; forming a metal oxide film by a oxidation processing to oxidize selectively at least a surface of the metal film on the device isolation insulating film; increasing the concentration of silicon in the silicide film by a second heating processing; and selectively removing the metal oxide film and an unreacted part of the metal film on the device isolation insulating film.

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patent: 2005-19705 (2005-01-01), None
Matsuo, et al., “Semiconductor Device Having MISFETS and Manufacturing Method Thereof”, U.S. Appl. No. 12/409,092, filed Mar. 23, 2009.

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