Semiconductor device manufacturing method

Details Semiconductor device manufacturing method Semiconductor device manufacturing method

2011-06-07

2011-06-07

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S652000, C438S654000, C438S687000, C257SE21577

Reexamination Certificate

active

07955970

ABSTRACT:
A process for producing a semiconductor device, comprising the wiring region forming step of forming a wiring region on a semiconductor substrate; the copper wiring layer forming step of forming a copper wiring layer on the formed wiring region by electrolytic plating technique, wherein the copper wiring layer is formed by passing a current of application pattern determined from the relationship between application pattern of current passed at electrolytic plating and impurity content characteristic in the formed copper wiring layer so that the impurity content in the formed copper wiring layer becomes desired one; and the wiring forming step of polishing the formed copper wiring layer into a wiring.

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