Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1999-03-10
2000-08-22
Thomas, Tom
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438597, 438629, 257748, 257751, 257768, H01L 2144, H01L 214763
Patent
active
061072001
ABSTRACT:
The semiconductor device manufacturing method includes the step of forming a second tungsten film on a first tungsten film, which is formed by using a reduction gas not-containing diborane, by using a gas containing the diborane, or forming the second tungsten film on the first tungsten film after the first tungsten film has been exposed to the gas containing the diborane.
Iio Hiroki
Ota Yuzuru
Takagi Hideo
Fujitsu Limited
Souw Bernard E.
Thomas Tom
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