Semiconductor device manufacturing method

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

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Details

438597, 438629, 257748, 257751, 257768, H01L 2144, H01L 214763

Patent

active

061072001

ABSTRACT:
The semiconductor device manufacturing method includes the step of forming a second tungsten film on a first tungsten film, which is formed by using a reduction gas not-containing diborane, by using a gas containing the diborane, or forming the second tungsten film on the first tungsten film after the first tungsten film has been exposed to the gas containing the diborane.

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