Semiconductor device manufacturing apparatus employing vacuum sy

Details Semiconductor device manufacturing apparatus employing vacuum sy Semiconductor device manufacturing apparatus employing vacuum sy

1997-12-01

2000-06-06

Tentoni, Leo B.

Coating apparatus

Gas or vapor deposition

Multizone chamber

118 50, 118724, 118733, 251305, 414217, 414939, C23C 1646

Patent

active

06071350&

ABSTRACT:
An apparatus for manufacturing a semiconductor device employs a vacuum system, in which a heating source is installed in a predetermined portion of a venting-gas inlet. A venting-speed controlling valve is installed in a predetermined portion of an exhaust pipe, for controlling the speed of gas flowing from a load lock chamber to a pump by controlling the opening and closing thereof. An exhaust pipe may have a main pipe with different diameters in different portions to reduce the venting speed. Accordingly, condensation-induced particle formation can be reduced by thus preventing adiabatic expansion of the gas in a load lock chamber.

REFERENCES:
patent: 4739787 (1988-04-01), Stoltenberg
patent: 5308989 (1994-05-01), Brubaker
patent: 5314541 (1994-05-01), Saito et al.
Benjamin et al., "Condensation-Induced Particle Formation during Vacuum Pump Down," Electrochem. Soc., vol. 140, No. 5, May 1993, pp. 1463-1468.

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