Semiconductor device manufacturing apparatus and cleaning method

Details Semiconductor device manufacturing apparatus and cleaning method Semiconductor device manufacturing apparatus and cleaning method

1995-09-14

1996-12-17

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566571, 156345, 134 221, 134 31, H01L 2100, B44C 122

Patent

active

055849636

ABSTRACT:
In a semiconductor device manufacturing apparatus for forming silicon oxide films on semiconductor wafers by reduced-pressure CVD, anhydrous HF gas and an interhalogen compound gas are introduced along with a carrier gas to a reaction chamber or a vacuum evacuation pipe. The anhydrous HF gas and the interhalogen compound gas react with deposits adhering to an inner wall of the reaction chamber and the vacuum evacuation pipe so that the deposits are decomposed into gases and removed. Particles attributable to the deposits are prevented from adhering to the semiconductor wafers.

REFERENCES:
patent: 4749440 (1988-06-01), Blackwood et al.
patent: 5294262 (1994-03-01), Nishimura
patent: 5336356 (1994-08-01), Ban et al.

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